SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: R = 3.60 (max) ( V = -1.5 V) on GS 2.10.1 : R = 2.70 (max) ( V = -1.8 V) on GS 1.70.1 : R = 1.60 (max) ( V = -2.8 V) on GS : R = 1.31 (max) ( V = -4.5 V) on GS 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5 Characteristics Symbol Rating Unit 3 4 Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS DC I -330 D Drain current mA Pulse I -660 DP Drain power dissipation P (Note1) 500 mW D Channel temperature T 150 C ch 1.Source1 4.Source2 T 55 to 150 C Storage temperature range stg 2.Gate1 5.Gate2 3.Drain2 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of UF6 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2T1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 7.0 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating 2 Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 PX Q2 1 2 3 12 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below 1 mA for the th D SSM6P36TU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Start of commercial production 2008-06 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6P36TU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -16 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -100mA (Note2) 190 mS fs DS D I = -100mA, V = -4.5 V (Note2) 0.95 1.31 D GS I = -80mA, V = -2.8 V (Note2) 1.22 1.60 D GS Drain-source ON-resistance R DS (ON) I = -40mA, V = -1.8 V (Note2) 1.80 2.70 D GS I = -30mA, V = -1.5 V (Note2) 2.23 3.60 D GS Input capacitance C 43 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 10.3 pF DS GS oss Reverse transfer capacitance C 6.1 rss Total Gate Charge Q 1.2 g V = -10 V, I = -330mA DS DS GateSource Charge Q 0.85 nC gs V = -4 V GS GateDrain Charge Q 0.35 gd Turn-on time t 90 on V = -10 V, I = -100mA DD D Switching time ns V = 0 to -2.5 V, R = 50 GS G Turn-off time t 200 off Drain-source forward voltage V I =330mA, V = 0 V (Note2) 0.88 1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 2.5V R 2.5 V L 10 s V DD (c) V V OUT DS (ON) 90% V = 10 V DD Duty 1% 10% V : t , t < 5 ns V IN r f DD t t r f (Z = 50 ) out Common Source t t on off Ta = 25C 2 2014-03-01 R G