TDTC114E,LM(T Toshiba

TDTC114E,LM(T electronic component of Toshiba
TDTC114E,LM(T Toshiba
TDTC114E,LM(T Bipolar Transistors - BJT
TDTC114E,LM(T  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of TDTC114E,LM(T Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TDTC114E,LM(T Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. TDTC114E,LM(T
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 320mW; SOT23; R1:10kO
Datasheet: TDTC114E,LM(T Datasheet (PDF)
Price (USD)
20: USD 0.0546 ea
Line Total: USD 1.09 
Availability : 3443
  
Ship by Fri. 10 Oct to Tue. 14 Oct
QtyUnit Price
20$ 0.0546
100$ 0.0378
500$ 0.0336
670$ 0.0294
1830$ 0.028

Availability 3443
Ship by Fri. 10 Oct to Tue. 14 Oct
MOQ : 20
Multiples : 10
QtyUnit Price
20$ 0.0546
100$ 0.0378
500$ 0.0336
670$ 0.0294
1830$ 0.028

   
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We are delighted to provide the TDTC114E,LM(T from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TDTC114E,LM(T and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The TDTC114E is a transistor, manufactured by Toshiba, that is a NPN (negative positive negative) bipolar junction field effect transistor (BJFET) with a basic resistor (BRT) rating of 50V, current rating of 0.1A, and a total power dissipation rating of 320mW. This transistor features SOT23 packaging, and comes with a pre-installed resistor of 10kO mounted on the board. The LM(T) part number designates this device as a Bipolar Switching (or low power) type device.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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