X-On Electronics has gained recognition as a prominent supplier of TPC6901(TE85L,F,M) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TPC6901(TE85L,F,M) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TPC6901(TE85L,F,M) Toshiba

TPC6901(TE85L,F,M) electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No. TPC6901(TE85L,F,M)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor NPNPNP 50V 1A
Datasheet: TPC6901(TE85L,F,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5535
10 : USD 0.6351
100 : USD 0.2972
1000 : USD 0.2371
3000 : USD 0.2123
9000 : USD 0.1967
24000 : USD 0.1937
45000 : USD 0.1895
99000 : USD 0.1885
N/A

Obsolete
   
Manufacturer
Product Category
Packaging
Category
Factory Pack Quantity :
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We are delighted to provide the TPC6901(TE85L,F,M) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC6901(TE85L,F,M) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications Unit: mm MOS Gate Drive Applications NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN h = 400 to 1000 FE : PNP h = 200 to 500 FE Low collector-emitter saturation voltage : NPN V = 0.17 V (max) CE (sat) : PNP V = 0.23 V (max) CE (sat) High-speed switching: NPN t = 85 ns (typ.) f : PNP tf = 70 ns (typ.) Maximum Ratings (Ta = 25C) Rating Characteristics Symbol Unit NPN PNP 50 Collector-base voltage V 100 V CBO Collector-emitter voltage V 80 50 V CEX JEDEC Collector-emitter voltage V 50 50 V CEO JEITA Emitter-base voltage V 7 7 V EBO TOSHIBA 2-3T1A DC (Note 1) I 1.0 0.7 A C Collector current Weight: 0.011 g (typ.) I 2.0 2.0 Pulse (Note 1) A CP Base current I 0.1 0.1 A B Collector power Single-device dissipation (t=10 s) P(1) 500 mW C operation (Note 2) Single-device P(2) 400 C operation Collector power dissipation (DC) mW Single-device (Note 2) value at dual P(3) 330 C operation Thermal resistance, Single-device junction to ambient R (1) 250 C/W th (j-a) operation (t=10 s) (Note 2) Single-device R (2) 312 th (j-a) operation Thermal resistance, junction to ambient C/W Single-device (DC) (Note 2) value at dual R (3) 378 th (j-a) operation Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note 1: Ensure that the channel temperature does not exceed 150C. 2 Note 2:Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 2004-11-02 TPC6901 Circuit Configuration Marking 6 5 4 Lot code (month) Lot No. Part No. H6A (or abbreviation code) Product-specific code Pin 1 Lot code A line indicates 1 2 3 (year) lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Ta = 25C) : NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 100 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 400 1000 FE CE C DC current gain h (2) V = 2 V, I = 0.3 A 200 FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 6 mA 0.17 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 6 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 5 pF ob CB E Rise time t See Figure 1 circuit diagram. 35 r Switching time V 30 V, R = 100 ns Storage time t 680 stg CC L I = I = 10 mA Fall time t 85 B1 B2 f Electrical Characteristics (Ta = 25C) : PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.1 A 200 500 FE CE C DC current gain h (2) V 2 V, I 0.3 A 125 = = FE CE C Collector-emitter saturation voltage V I = 300 mA, I = 10 mA 0.23 V CE (sat) C B Base-emitter saturation voltage V I = 300 mA, I = 10 mA 1.10 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 8 pF ob CB E Rise time t See Figure 2 circuit diagram. 60 r Switching time Storage time t V 30 V, R = 100 280 ns stg CC L I = I = 10 mA Fall time t 70 B1 B2 f 2 2004-11-02

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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