Product Information

TTA003,L1NQ(O

TTA003,L1NQ(O electronic component of Toshiba

Datasheet
Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.917 ea
Line Total: USD 1.92

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.917
10 : USD 0.9311
100 : USD 0.5281
250 : USD 0.5119
500 : USD 0.4104
1000 : USD 0.3283
2000 : USD 0.297

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
2SA1162-Y,LF electronic component of Toshiba 2SA1162-Y,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 12000

1SS352,H3F electronic component of Toshiba 1SS352,H3F

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 405000

T2N7002BK,LM electronic component of Toshiba T2N7002BK,LM

N-Channel 60 V 400mA (Ta) 320mW (Ta) Surface Mount SOT-23-3
Stock : 81640

TBC857B,LM electronic component of Toshiba TBC857B,LM

Bipolar Transistors - BJT BJT PNP -0.15A -50V
Stock : 0

TMBT3906,LM electronic component of Toshiba TMBT3906,LM

Bipolar (BJT) Transistor PNP 50 V 150 mA 250MHz 320 mW Surface Mount SOT-23-3
Stock : 116

DF2S16FS,L3M electronic component of Toshiba DF2S16FS,L3M

ESD Suppressors / TVS Diodes ESD PROTECTION DIODE
Stock : 10000

CES521,L3F electronic component of Toshiba CES521,L3F

Schottky Diodes & Rectifiers SM Sig Schotky Diode 30 VR 0.2A 1 Circuit
Stock : 0

RN1301,LF electronic component of Toshiba RN1301,LF

Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 250Mhz
Stock : 12000

TMBT3904,LM electronic component of Toshiba TMBT3904,LM

Bipolar (BJT) Transistor NPN 50 V 150 mA 300MHz 320 mW Surface Mount SOT-23-3
Stock : 29500

2SA1162-GR,LF electronic component of Toshiba 2SA1162-GR,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 2800

Image Description
2N5401 electronic component of Central Semiconductor 2N5401

Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp
Stock : 1

2SD1898T100Q electronic component of ROHM 2SD1898T100Q

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3
Stock : 4247

MJE170G electronic component of ON Semiconductor MJE170G

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Stock : 266

FMMT551TA electronic component of Diodes Incorporated FMMT551TA

Bipolar Transistors - BJT PNP Medium Power
Stock : 1227

BC807DS,115 electronic component of Nexperia BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 444000

NSS60601MZ4T3G electronic component of ON Semiconductor NSS60601MZ4T3G

ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Stock : 1

KSC2330YTA electronic component of ON Semiconductor KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 0

CMUT2907A TR electronic component of Central Semiconductor CMUT2907A TR

Central Semiconductor Bipolar Transistors - BJT PNP
Stock : 8901

2SC4117-BL,LF electronic component of Toshiba 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2N4401 electronic component of ON Semiconductor 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 0

TTA003 Bipolar Transistors Silicon PNP Epitaxial Type TTA003TTA003TTA003TTA003 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Amplifiers Power Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low collector saturation voltage: V = -0.5 V (max) (I = -1 A, I = -100 mA) CE(sat) C B (2) High-speed switching: t = 300 ns (typ.) stg 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 CEO Emitter-base voltage V -7 EBO Collector current (DC) (Note 1) I -3 A C Collector current (pulsed) (Note 1) I -5 CP Base current I -1.5 B Collector power dissipation (T = 25) P 10 W c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2009-09 2014-01-24 1 Rev.2.0TTA003 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25) ) 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25) ) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -80 V, I = 0 A -100 nA CBO CB E Emitter cut-off current I V = -7 V, I = 0 A -100 EBO EB C Collector-emitter breakdown voltage V I = -10 mA, I = 0 A -80 V (BR)CEO C B DC current gain h V = -2 V, I = -1 mA 80 FE(1) CE C h V = -2 V, I = -0.5 A 100 200 FE(2) CE C h V = -2 V, I = -1 A 60 FE(3) CE C Collector-emitter saturation voltage V I = -0.5 A, I = -50 mA -0.3 V CE(sat)(1) C B V I = -1 A, I = -100 mA -0.5 CE(sat)(2) C B Base-emitter saturation voltage V I = -1 A, I = -100 mA -1.5 BE(sat) C B 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) ) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = -2 V, I = -0.5 A 100 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 25 pF ob CB E Switching time (rise time) t See Figure 5.2.1. 30 ns r Switching time (storage time) t 300 stg Switching time (fall time) t 40 f Fig. Fig. Fig. Fig. 5.2.15.2.15.2.15.2.1 Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6. 6. 6. 6. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Fig. 6.1 Marking Fig. Fig. Fig. 6.16.16.1 MarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2014-01-24 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted