X-On Electronics has gained recognition as a prominent supplier of TTA003,L1NQ(O bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. TTA003,L1NQ(O bipolar transistors - bjt are a product manufactured by Toshiba. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

TTA003,L1NQ(O

TTA003,L1NQ(O electronic component of Toshiba
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Part No.TTA003,L1NQ(O
Manufacturer: Toshiba
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP -80V 10W 100MHz 200 hFE
Datasheet: TTA003,L1NQ(O Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9779 ea
Line Total: USD 1.98

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.9779
10 : USD 0.9606
100 : USD 0.5449
250 : USD 0.5282
500 : USD 0.4234
1000 : USD 0.3387
2000 : USD 0.3064

     
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TTA003 Bipolar Transistors Silicon PNP Epitaxial Type TTA003TTA003TTA003TTA003 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Amplifiers Power Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low collector saturation voltage: V = -0.5 V (max) (I = -1 A, I = -100 mA) CE(sat) C B (2) High-speed switching: t = 300 ns (typ.) stg 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 CEO Emitter-base voltage V -7 EBO Collector current (DC) (Note 1) I -3 A C Collector current (pulsed) (Note 1) I -5 CP Base current I -1.5 B Collector power dissipation (T = 25) P 10 W c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2009-09 2014-01-24 1 Rev.2.0TTA003 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25) ) 5.1. 5.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25) ) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -80 V, I = 0 A -100 nA CBO CB E Emitter cut-off current I V = -7 V, I = 0 A -100 EBO EB C Collector-emitter breakdown voltage V I = -10 mA, I = 0 A -80 V (BR)CEO C B DC current gain h V = -2 V, I = -1 mA 80 FE(1) CE C h V = -2 V, I = -0.5 A 100 200 FE(2) CE C h V = -2 V, I = -1 A 60 FE(3) CE C Collector-emitter saturation voltage V I = -0.5 A, I = -50 mA -0.3 V CE(sat)(1) C B V I = -1 A, I = -100 mA -0.5 CE(sat)(2) C B Base-emitter saturation voltage V I = -1 A, I = -100 mA -1.5 BE(sat) C B 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) ) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = -2 V, I = -0.5 A 100 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 25 pF ob CB E Switching time (rise time) t See Figure 5.2.1. 30 ns r Switching time (storage time) t 300 stg Switching time (fall time) t 40 f Fig. Fig. Fig. Fig. 5.2.15.2.15.2.15.2.1 Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6. 6. 6. 6. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Fig. 6.1 Marking Fig. Fig. Fig. 6.16.16.1 MarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2014-01-24 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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