TTC4116FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) TTC4116FU Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 120 to 400 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B Collector power dissipation P 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA SC-70 temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2E1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Weight: 6.0 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 60 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C DC current gain h V = 6 V, I = 2 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.25 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2.0 3.5 pF ob CB E V = 6 V, I = 0.1 mA, f = 1 kHz, CE C Noise figure NF 1.0 10 dB R = 10 k, g Marking Type Name BP1 Start of commercial production 2009-09 1 2014-03-01 TTC4116FU 2 2014-03-01