Product Information

BCY59X

BCY59X electronic component of STMicroelectronics

Datasheet
Bipolar Transistors - BJT NPN Low Noise Audio
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6493 ea
Line Total: USD 0.65

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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BCY59X
STMicroelectronics

1 : USD 0.6493
10 : USD 0.6376
125 : USD 0.5674
750 : USD 0.4387
1500 : USD 0.4154
2500 : USD 0.4095

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Additional Infomation About Product

BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 45 V V Collector-Emitter Voltage (I = 0) 45 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 200 mA I Base Current 50 mA B o P 0.39 W tot Total Dissipation at T 25 C amb o 1 W at T 25 C C o T Storage Temperature -55 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/6 September 2002 Obsolete Product(s) - Obsolete Product(s)BCY59 THERMAL DATA o R Thermal Resistance Junction-Case Max 150 C/W thj-case o R Thermal Resistance Junction-Ambient Max 384.6 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 45 V 0.1 10 nA CES CE o Current (V = 0) V = 45 V T = 150 C 0.1 10 A BE CE C o I Collector Cut-off V = 45 V T = 100 C20A CEX CE C Current (V = -0.2 V) BE I Emitter Cut-off Current V = 5 V 10 nA EBO EB (IC = 0) V * Collector-Emitter I = 2 mA 45 V (BR)CEO C Breakdown Voltage (I = 0) B V Emitter-Base 7V (BR)EBO I = 10 A E Breakdown Voltage (I = 0) C V * Collector-Emitter I = 10 mA I = 0.25 mA 0.12 0.35 V CE(sat) C B Saturation Voltage I = 100 mA I = 2.5 mA 0.4 0.7 V C B V * Base-Emitter I = 10 mA I = 0.25 mA 0.6 0.7 0.85 V BE(sat) C B Saturation Voltage IC = 100 mA IB = 2.5 mA 0.75 0.9 1.2 V VBE(on)* Base-Emitter (on) IC = 2 mA VCE = 5 V 0.55 0.65 0.7 V Voltage I = 100 mA V = 1 V 0.75 V C CE h * DC Current Gain FE IC = 10 A VCE = 5 V 20 140 Gr. VIII Gr. IX 40 195 100 280 Gr. X I = 2 mA V = 5 V C CE 180 250 310 Gr. VIII 250 350 460 Gr. IX 380 500 630 Gr. X I = 10 mA V = 1 V C CE 120 260 Gr. VIII 160 365 Gr. IX Gr. X 240 520 I = 100 mA V = 1 V C CE Gr. VIII 45 60 Gr. IX Gr. X 60 hfe* Small Signal Current IC = 2 mA VCE = 5 V f = 1 KHz Gain Gr. VIII 175 350 Gr. IX 250 500 Gr. X 350 700 f Transition Frequency I = 10 mA V = 5 V f = 100 MHz 200 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/6 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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