ST13003-K STMicroelectronics

ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high C(2) switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) E(1) SC06960r Table 1. Device summary Part number Marking Package Packaging ST13003 13003 SOT-32 Tube ST13003-K 13003 SOT-32 Bag June 2013 DocID13533 Rev 5 1/10 This is information on a product in full production. www.st.comElectrical ratings ST13003, ST13003-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.75 A, t < 10 s) V V EBO C B P (BR)EBO I Collector current 1.5 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.75 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 40 W TOT C T Storage temperature -55 to 150 C STG T Operating junction temperature -40 to 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 3.1 C/W thJC 2/10 DocID13533 Rev 5