ST13003-K STMicroelectronics

ST13003-K electronic component of STMicroelectronics
ST13003-K STMicroelectronics
ST13003-K Bipolar Transistors - BJT
ST13003-K  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ST13003-K Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ST13003-K Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ST13003-K
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT High voltage Fast-switching NPN
Datasheet: ST13003-K Datasheet (PDF)
Price (USD)
5: USD 0.5202 ea
Line Total: USD 2.6 
Availability : 53
  
Ship by Fri. 22 Aug to Wed. 27 Aug
QtyUnit Price
5$ 0.5202
50$ 0.3044
150$ 0.2407
500$ 0.1994
2500$ 0.1811
5000$ 0.1701

Availability 4906
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 361
Multiples : 1
QtyUnit Price
361$ 0.721
363$ 0.7169
453$ 0.5747
557$ 0.4671
1000$ 0.393
2500$ 0.3677
5000$ 0.3326
10000$ 0.308


Availability 53
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5202
50$ 0.3044
150$ 0.2407
500$ 0.1994
2500$ 0.1811
5000$ 0.1701

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ST13003-K from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ST13003-K and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high C(2) switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. B(3) E(1) SC06960r Table 1. Device summary Part number Marking Package Packaging ST13003 13003 SOT-32 Tube ST13003-K 13003 SOT-32 Bag June 2013 DocID13533 Rev 5 1/10 This is information on a product in full production. www.st.comElectrical ratings ST13003, ST13003-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.75 A, t < 10 s) V V EBO C B P (BR)EBO I Collector current 1.5 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.75 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 40 W TOT C T Storage temperature -55 to 150 C STG T Operating junction temperature -40 to 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 3.1 C/W thJC 2/10 DocID13533 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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