2SA1162 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: V = -50 V CEO (3) High collector current: I = -150 mA (max) C (4) High h : h = 70 to 400 FE FE (5) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE FE C FE C (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 1: Base 2: Emitter 3: Collector S-Mini Start of commercial production 1982-12 2021 2021-06-28 1 Toshiba Electronic Devices & Storage Corporation Rev.2.02SA1162 4. Orderable part number Orderable part number AEC-Q101 Note 2SA1162-O 2SA1162-O,LF General Use 2SA1162-O,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1162-O,LXHF YES Automotive Use 2SA1162-Y 2SA1162-Y,LF General Use 2SA1162-Y,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1162-Y,LXHF YES Automotive Use 2SA1162-GR 2SA1162-GR,LF General Use 2SA1162-GR,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1162-GR,LXHF YES Automotive Use 2SA1162-BL 2SA1162-BL,LF General Use 2SA1162-BL,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1162-BL,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current (DC) I -150 mA C Base current I -30 mA B Collector power dissipation (Note 2), (Note 4) P 200 mW C (Note 3) 150 Junction temperature (Note 2) T 150 j (Note 3) 125 Storage temperature (Note 2) T -55 to 150 stg (Note 3) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. Note 4: Device mounted on an 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.8 mm2 3) 2021 2021-06-28 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0