X-On Electronics has gained recognition as a prominent supplier of 2SA1586SU-GR,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1586SU-GR,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1586SU-GR,LF Toshiba

2SA1586SU-GR,LF electronic component of Toshiba
2SA1586SU-GR,LF Toshiba
2SA1586SU-GR,LF Bipolar Transistors - BJT
2SA1586SU-GR,LF  Semiconductors

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See Product Specifications
Part No. 2SA1586SU-GR,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SM Sig PNP Trans VCEO -50V IC -150mA
Datasheet: 2SA1586SU-GR,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0397 ea
Line Total: USD 119.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
937
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2375
10 : USD 0.1438
100 : USD 0.0828
1000 : USD 0.044
3000 : USD 0.0374
9000 : USD 0.0297
24000 : USD 0.0275
45000 : USD 0.0253
99000 : USD 0.022

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1586SU-GR,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1586SU-GR,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA1586 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1586 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: V = -50 V CEO (3) High collector current: I = -150 mA (max) C (4) High h : h = 70 to 400 FE FE (5) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE FE C FE C (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SC4116 (8) Small package 3. Packaging 1: Base 2: Emitter 3: Collector USM Start of commercial production 1987-01 2021 2021-07-06 1 Toshiba Electronic Devices & Storage Corporation Rev.3.02SA1586 4. Orderable part number Orderable part number AEC-Q101 Note 2SA1586-O 2SA1586-O,LF General Use 2SA1586-O,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1586-O,LXHF YES Automotive Use 2SA1586-Y 2SA1586-Y,LF General Use 2SA1586-Y,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1586-Y,LXHF YES Automotive Use 2SA1586-GR 2SA1586-GR,LF General Use 2SA1586-GR,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1586-GR,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current (DC) I -150 mA C Base current I -30 mA B Collector power dissipation (Note 2), (Note 4) P 200 mW C (Note 3) 100 Junction temperature (Note 2) T 150 j (Note 3) 125 Storage temperature (Note 2) T -55 to 150 stg (Note 3) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. Note 4: Device mounted on an 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.5 mm2 3) 6. Electrical Characteristics (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current I V = -50 V, I = 0 A -0.1 A CBO CB E Emitter cut-off current I V = -5 V, I = 0 A -0.1 A EBO EB C DC current gain h (Note 5) V = -6 V, I = -2 mA 70 400 FE CE C Collector-emitter saturation V I = -100 mA, I = -10 mA -0.1 -0.3 V CE(sat) C B voltage Transition frequency f V = -10 V, I = -1 mA 80 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 4 7 pF ob CB E Noise figure NF V = -6 V, I = -0.1 mA, 1.0 10 dB CE C f = 1 kHz, R = 10 k G Note 5: h classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400 FE ( ) marking symbol 2021 2021-07-06 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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