2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: h = 200 to 500 (I = 0.3 A) FE C Low collector-emitter saturation voltage: V = 0.2 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 7 V EBO DC I 2.0 C Collector current A Pulse I 3.5 JEDEC CP Base current I 200 mA B JEITA SC-62 t = 10 s P 2.5 C Collector power TOSHIBA 2-5K1A W dissipation (Note 1) DC 1.0 Weight: 0.05 g (typ.) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg 2 Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2000-03 1 2013-11-01 2SA2060 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 7 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.3 A 200 500 FE CE C DC current gain h (2) V = 2 V, I = 1.0 A 100 FE CE C Collector-emitter saturation voltage V I = 1.0 A, I = 0.033 A 0.2 V CE (sat) C B Base-emitter saturation voltage V I = 1.0 A, I = 0.033 A 1.1 V BE (sat) C B Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 pF ob CB E Rise time t 60 See Figure 1 circuit diagram. r Switching time Storage time t V 30 V, R = 30 250 ns CC L stg I = 33 mA,I = 33 mA Fall time t B1 B2 90 f Marking V Part No. (or abbreviation code) CC 20 s I B2 I B1 Output 4 G Input I B1 Note 3 I B2 Lot No. Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Note 3: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 R L