2SC2712-GR,LF Toshiba

2SC2712-GR,LF electronic component of Toshiba
2SC2712-GR,LF Toshiba
2SC2712-GR,LF Bipolar Transistors - BJT
2SC2712-GR,LF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SC2712-GR,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC2712-GR,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SC2712-GR,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Transistor Lo Freq 0.15A 50V
Datasheet: 2SC2712-GR,LF Datasheet (PDF)
Price (USD)
3000: USD 0.0224 ea
Line Total: USD 67.2 
Availability : 0
  
QtyUnit Price
3000$ 0.0224

Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0369
9000$ 0.0365
9000$ 0.0362
12000$ 0.0345
15000$ 0.0341
21000$ 0.0338
24000$ 0.0334
30000$ 0.0331
75000$ 0.0328


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0453
6000$ 0.0378
15000$ 0.0321
30000$ 0.0302
75000$ 0.0283
150000$ 0.0246


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2625
10$ 0.204
100$ 0.1079
500$ 0.0709
1000$ 0.0482


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2625
10$ 0.204
100$ 0.1079
500$ 0.0709
1000$ 0.0482


Availability 0
Ship by Fri. 24 Oct to Tue. 28 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5437
10$ 0.4427
100$ 0.0982
500$ 0.0621
1000$ 0.0425
3000$ 0.0321


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0224


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0223
9000$ 0.0218


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 305
Multiples : 37
QtyUnit Price
305$ 0.0549


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 218
Multiples : 286
QtyUnit Price
218$ 0.1191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC2712-GR,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC2712-GR,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC2712 Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: V = 50 V CEO (3) High collector current: I = 150 mA (max) C (4) High h : h = 70 to 700 FE FE (5) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 1: Base 2: Emitter 3: Collector S-Mini Start of commercial production 1982-10 2021 2021-07-06 1 Toshiba Electronic Devices & Storage Corporation Rev.6.02SC2712 4. Orderable part number Orderable part number AEC-Q101 Note 2SC2712-O 2SC2712-O,LF General Use 2SC2712-O,LXGF YES (Note 1) Unintended Use (Note 1) 2SC2712-O,LXHF YES Automotive Use 2SC2712-Y 2SC2712-Y,LF General Use 2SC2712-Y,LXGF YES (Note 1) Unintended Use (Note 1) 2SC2712-Y,LXHF YES Automotive Use 2SC2712-GR 2SC2712-GR,LF General Use 2SC2712-GR,LXGF YES (Note 1) Unintended Use (Note 1) 2SC2712-GR,LXHF YES Automotive Use 2SC2712-BL 2SC2712-BL,LF General Use 2SC2712-BL,LXGF YES (Note 1) Unintended Use (Note 1) 2SC2712-BL,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current (DC) I 150 mA C Base current I 30 mA B Collector power dissipation (Note 2), (Note 4) P 200 mW C (Note 3) 150 Junction temperature (Note 2) T 150 j (Note 3) 125 Storage temperature (Note 2) T -55 to 150 stg (Note 3) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. Note 4: Device mounted on an 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.8 mm2 3) 2021 2021-07-06 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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