Product Information

TPH1R403NL

TPH1R403NL electronic component of Toshiba

Datasheet
MOSFET N Trench 30V 150A 2.3V @ 500uA 1.4 mΩ @ 30A,10V SOP Advance RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7624 ea
Line Total: USD 0.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

TPH1R403NL
Toshiba

1 : USD 0.667
10 : USD 0.5651
30 : USD 0.492
100 : USD 0.4322
500 : USD 0.4145
1000 : USD 0.4011

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TPH1R403NL is a 30V MOSFET N Trench switch manufactured by Toshiba. It has a 2.3V gate threshold voltage and a gate current of 500uA. It has a drain-source resistance (Rds) of 1.4mΩ and a peak drain current of 30A. It comes in an industry standard, advanced-surface mount SOP package. It is compliant with the EU RoHS Directive 2002/95/EC. This device is suitable for a wide range of applications exciting from high power converters to low voltage high current switching scenarios.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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