BUJ302AD,118 WeEn Semiconductor

BUJ302AD NPN power transistor Rev. 01 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (DPAK) surface mounted package. 1.2 Features and benefits Fast switching Low thermal resistance High voltage capability Surface-mountable package 1.3 Applications DC-to-DC converters Inverters High-frequency electronic lighting Motor control systems ballast applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 --4 A C see Figure 4 P total power dissipation T 25 C see Figure 3 --80 W tot mb V collector-emitter peak V=0V --1050V CESM BE voltage Static characteristics 1 DC current gain I = 0.1 A V =5V 48 66 100 h FE C CE T = 25 C see Figure 11 mb 1 I = 0.8 A V =3V 25 42 50 C CE T = 25 C see Figure 12 mb 1 Pulse test: pulse duration 300 s, duty cycle 2 % DPAKBUJ302AD NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 1 2 C collector 3E emitter B mb C mounting base connected to E collector 2 sym123 1 3 SOT428 (DPAK) 1 it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302AD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 1050 V CESM BE V collector-emitter voltage I = 0 A - 400 V CEO B I collector current see Figure 1 see Figure 2 see Figure 4 -4 A C I peak collector current - 8 A CM I base current - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -80 W tot mb T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I =0A I =2 A t < 10 ms - 24 V EBO C E p BUJ302AD All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 28 March 2011 2 of 14