STN9360 STMicroelectronics

STN9360 electronic component of STMicroelectronics
STN9360 STMicroelectronics
STN9360 Bipolar Transistors - BJT
STN9360  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STN9360 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STN9360 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. STN9360
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Hi Vltg fast-switch PNP pwr transistor
Datasheet: STN9360 Datasheet (PDF)
Price (USD)
5: USD 0.7248 ea
Line Total: USD 3.62 
Availability : 761
  
Ship by Fri. 08 Aug to Wed. 13 Aug
QtyUnit Price
5$ 0.7248
50$ 0.4561
150$ 0.3768
1000$ 0.2542
2000$ 0.2356
5000$ 0.2242

Availability 98940
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.3558
2000$ 0.3243
3000$ 0.3115
5000$ 0.2933
7000$ 0.2931


Availability 2910
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 3000
Multiples : 1000
QtyUnit Price
3000$ 0.3047
5000$ 0.287
7000$ 0.2765
10000$ 0.2662
25000$ 0.2496


Availability 1205
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 769
Multiples : 1
QtyUnit Price
769$ 0.3382
780$ 0.3337
790$ 0.3292
801$ 0.3246
1000$ 0.32


Availability 761
Ship by Fri. 08 Aug to Wed. 13 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.7248
50$ 0.4561
150$ 0.3768
1000$ 0.2542
2000$ 0.2356
5000$ 0.2242

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STN9360 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STN9360 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STN9360 High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 3 Applications 2 1 Lighting Switch mode power supply SOT-223 Description This device is a high voltage fast-switching PNP I power transistor. It is manufactured using high Figure 1. Internal schematic diagram voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Part number Marking Package Packaging STN9360 N9360 SOT-223 Tape and reel December 2012 Doc ID 023213 Rev 2 1/10 This is information on a product in full production. www.st.com 10Electrical ratings STN9360 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) -600 V CES BE V Collector-emitter voltage (I = 0) -600 V CEO B V Emitter-base voltage (I = 0) -7 V EBO C I Collector current -0.5 A C I Collector peak current (t < 5 ms) -1 A CM P I Base current -0.25 A B I Base peak current (t < 5 ms) -0.5 A BM P P Total dissipation at T = 25 C 1.6 W TOT a T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 78 C/W thJA 1. Device mounted on PCB area of 1 cm . 2/10 Doc ID 023213 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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