2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N2SC5200N2SC5200N2SC5200N 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Amplifiers 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High collector voltage: V = 230 V (min) CEO (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P(N) 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) cccc Characteristics Symbol Rating Unit Collector-base voltage V 230 V CBO Collector-emitter voltage V 230 CEO Emitter-base voltage V 5 EBO Collector current (DC) (Note 1) I 15 A C Base current I 1.5 B Collector power dissipation P 150 W C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2012-08 2015-05-12 1 Rev.2.02SC5200N 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Junction-to-case thermal resistance R 0.83 /W th(j-c) 6. 6. Electrical CharacteristicsElectrical Characteristics 6. 6. Electrical CharacteristicsElectrical Characteristics 6.1. 6.1. 6.1. 6.1. Static Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, TStatic Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) cccc Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 230 V, I = 0 A 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 5.0 EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 A 230 V (BR)CEO C B DC current gain h V = 5 V, I = 1 A 80 160 FE(1) CE C h V = 5 V, I = 7 A 35 FE(2) CE C Collector-emitter saturation voltage V I = 8 A, I = 0.8 A 0.4 3.0 V CE(sat) C B Base-emitter voltage V V = 5 V, I = 7 A 0.9 1.5 BE CE C 6.2. 6.2. Dynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, T = 25 = 25)) 6.2. 6.2. Dynamic Characteristics (Unless otherwise specified, TDynamic Characteristics (Unless otherwise specified, T = 25 = 25)) cc cc Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 200 pF ob CB E 7. 7. 7. 7. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Fig. Fig. Fig. Fig. 7.17.17.17.1 MarkingMarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2015-05-12 2 Rev.2.0